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BSS84
IMPORTANT NOTICE
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Copyright ? 2013, Diodes Incorporated
www.diodes.com
BSS84
Document number: DS30149 Rev. 20 - 2
5 of 5
www.diodes.com
August 2013
? Diodes Incorporated
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相关代理商/技术参数
BSS84-7-F
功能描述:MOSFET -50V 250mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS84-7-F-31
制造商:DIODES 功能描述:P-Channel NPN MOSFET / SOT-23
BSS84AK
制造商:NXP Semiconductors 功能描述:MOSFET P CH 50V 0.18A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 50V, 0.18A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 50V, 0.18A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-180mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V ;RoHS Compliant: Yes
BSS84AK,215
功能描述:MOSFET P-CH -50 V -180 mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS84AK-BR
功能描述:MOSFET P-CH 50V 180MA TO236AB 制造商:nexperia usa inc. 系列:汽车级，AEC-Q101 零件状态:停產 FET 类型:P 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:50V 电流 - 连续漏极（Id）（25°C 时）:180mA（Ta） 驱动电压（最大 Rds On，最小 Rds On）:5V，10V 不同 Id 时的 Vgs（th）（最大值）:2.1V @ 250μA 不同 Vgs 时的栅极电荷?（Qg）（最大值）:0.35nC @ 5V Vgs（最大值）:±20V 不同 Vds 时的输入电容（Ciss）（最大值）:36pF @ 25V FET 功能:- 功率耗散（最大值）:1.14W（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:7.5 欧姆 @ 100mA，10V 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 供应商器件封装:TO-236AB 封装/外壳:TO-236-3，SC-59，SOT-23-3 标准包装:3,000
BSS84AKM
制造商:NXP Semiconductors 功能描述:MOSFET P CH 50V 0.23A SOT883 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 50V, 0.23A, SOT883 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 50V, 0.23A, SOT883; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power ;RoHS Compliant: Yes
BSS84AKM,315
功能描述:MOSFET P-CH -50 V -230 mA 50V 230mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS84AKMB,315
功能描述:MOSFET P-Chan -50V -230mA
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube